The open-circuit voltage values of the cell up to 732 mV. It was fabricated with a back junction (BJ) design with a full-area p-n-junction at the back surface.
Fraunhofer Research Institute of Germany made a research for Solar Energy Systems have demonstrated a p-type back junction front/back‐contacted crystalline silicon solar cell with a power conversion efficiency of 26.0% and a fill factor of 84.3%.
Presented in the study Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses, recently published in nature energy, the device demonstrates the high performance of the reported back junction solar cell design with a full-area p-n-junction at the back surface, according to the scientists.
Armin Richter, the co-author of the research, said, “Currently, we are working on commercial production technologies to realize such cells at low cost.”
The cell was built with a full-area passivating contact based on Fraunhofer ISE’s TOPCon technology at the back surface and a highly transparent front surface based on dielectric passivation layers. Compared to conventional industrial cells with a front side p–n junction, the cell features a p–n junction at the back surface in the form of a full-area polycrystalline silicon-based passivating contact.
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